The larger WA is, the more extra data will be written in flash memory. In other words, it leads to more actual data being written into flash memory of SSD compared with user data. So SSD design aims at making WA as small as possible. The larger OP is, the smaller WA is, which means SSD performance will be better.

The passage mainly shows 3 kinds of concurrent execution units in NAND Flash chip, namely Device, Die, and Plane. By understanding internal structures and principles of these concurrent units, you may be will good at improving IO performance of NAND Flash.

The article tells us that some misconceptions about embedded flash solution. For example, many people thought that embedded flash memory cannot break through the nodes below 90nm but now it has developed to 28nm. Embedded flash is scalable and can be used in advanced technology nodes of OEM plants.

This paper briefly introduces different dimensions, capacities and clock frequencies of SD memory. When designing power supply, operating voltage and power consumption of SD memory should be considered. If voltage is too high, FAN5362 buck converter, an alternative to LDO regulator, is necessary to avoid power problems.

This part briefly shows the principle and usage of block erasure operation, reset operation, write protection operations and error management. In addition, the author shares some precautions in order to ensure the reliability of data.

This part introduces the principle of programming operations and internal data move in detail. Programming operations need SERIAL DATA INPUT 0x80 and RANDOM DATA INPUT 0x85 commands, while Internal data move requires two command sequences: READ FOR INTERNAL DATA MOVE(0x00-0x35) and INTERNAL DATA MOVE(0x85-0x10) command.

This part briefly explains the definitions of different parameters, such as bus operation and command list. Before understanding the principle and structure of NAND Flash, you should know about these following definitions.

The article mainly takes Micron MT29F2G08 as an example to introduce NAND Flash. An overview, functional block diagram, pins and address about Micron MT29F2G08 is showed in this paper.

This article will let us know this great data transmission device-USB 3.0 data cable from a professional point of view. USB 3.0 has greater performance than USB 2.0 in whether transmission rate or working power. In addition to its performance, principle, appearance and supported operating systems also are be introduced here.

Mobile phone has low power consumption, common performance and small volume due to its equipment features, while computer flash memory has opposite features. These two adapt equipment features of mobile and host terminal respectively.