This article will clarify the misconceptions about NAND flash memory. SSD may perform bad because poor quality of controller. SATA SSDs are still in high demand although PCIe dominates many consumer markets. As the function of the average erasing storage block technology being used, flash memory will break sooner or later. High-order custom managed NAND solutions can be easily built. Solutions are...

At this year's Hot Chips conference, industry experts called for a new generation of security-designed computer architecture to avoid the recurrence of Spectre/Meltdown security breaches. Surprisingly, to create safer products, Microsoft described the Pluton security module, while Google introduced Titan, which is expected that the two companies could merge into a standard one day.

NVMe, short for Non-Volatile Memory Express, is a protocol that makes solid-state drives (SSDs) run faster, and is gaining popularity among enterprise users. It makes full use of the low latency and parallelism of PCI-E channel, as well as the parallelism of modern processors, platforms and applications. With controllable storage costs, NVMe can greatly improve the read-write performance of SSDs,...

Flash is a kind of nonvolatile memory, whose basic storage cell is an NMOS-like bilayer floating gate MOS transistor. The write operation or erase operation depend on electrons enter or escape from the foating gate. According the size of data stored in a storage cell, flash is divided into SLC , MLC and TLC.

Many people may wonder how the sand becomes wafers. In fact, the sand is purified into polycrystalline silicon, and then polycrystalline silicon is used as raw material to make monocrystalline silicon. Silicon ingots, after being cut, rolled, sliced, chamfered, polished, laser engraved and packaged, become the basic raw material for integrated circuit factories—wafers.

Recently, Samsung has released a new UFS memory card with a capacity of up to 256GB, which completely crushes the existing Micro SD (TF card) flash card at the reading and writing speed. Although there is no obvious difference in appearance between them, UFS card with higher cost has a larger capacity than TF card. The actual performance of UFS memory card is very worthy of our expectation.

The NVMe standards organization has released the latest NVMe 1.3 standard on May 1, 2017, bringing many new features to the consumers and servers such as device self tests, booting partitions, sanitization, virtualization, directives and streams, and so on.

This article briefly introduces the types and storage mode of ROM and RAM. Take S3C2440 memory Bank as an example, introducing the internal structure and working principle of SDRAM.

The new type of DRAM breaks the refresh limitation with VLT technology, which can reduce the cost and complexity of DRAM, and doesn’t need new materials and technology. This article compares it with traditional DRAM and LPDDR4 to illustrate the difference between them, and this technology can be used on LPDDR4 without distinction.

This article is about how to choose a good memory card. It introduces the classification and tells us how to distinguish the transmitting speed and capacity limit of memory cards. In the end, it introduces the different uses of those memory cards